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<EUV-based 10-nano GDDR6 DRAM from Samsung Electronics>

Samsung Electronics finished the development of 10-nano 3rd gen (1z) 16Gb GDDR6 DRAM using an extreme ultraviolet (EUV) exposure process. The development of GDDR6 DRAM using EUV is the first in the world. GDDR6 is a graphic DRAM that dramatically increases data processing speed. GDDR6 can process 1.1 terabytes (TB) of data per second. This is a speed that can process 275 Full HD movies in 1 second.

It is 30% faster than the existing DRAM (18 Gbps) with a maximum speed of 24 Gbps. It is expected that the demand for high-performance GDDR6 to surge due to the advancement of graphics performance of PC, laptop, and game console and the growth of high-performance computing (HPC), electric vehicles and autonomous vehicle markets.

GDDR6 used the High-k Metal Gate (HKMG) process to reduce power consumption. It provides an optimal solution for applications where power efficiency is crucial by minimizing leakage current,.

Samsung Electronics also adopted low-power dynamic voltage scaling (DVS) to GDDR6. DVS is a technology that controls power consumption by dynamically changing the DRAM operating voltage. It supports operating voltage up to 1.1V, which is lower than the previous 1.35V. When this technology is applied to a laptop, the battery life is greatly increased.

Samsung Electronics developed GDDR6 with the compliance of Joint Electron Device Engineering Council (JEDEC) standard to increase the reliability of their products. It is expected that customers will be able to easily adopt GDDR6 in their applications.

Dong-ki Lee, vice president of product planning team of Samsung Electronics' memory business division, said, "GDDR6 will be installed and verified in the next-generation system of our major customers starting this month."

Samsung Electronics plans to lead the growth of the DRAM market with differentiated solutions in the GDDR6 market with a growing rate of double figures every year.

By Staff Reporter Ji-woong Kim