Samsung Electronics and Hynix plan to build a 300mm R&D line with the largest-ever equipment investment to maximize immediateness by reinforcing connection of R&D line and mass production line.
Samsung Electronics is to build NRD line(new R&D line) with the largest-ever 860 billion won and mass production line applying over 300mm micro-fine processing and increase `direct effect` to quickly transfer developed technology to volume production, according to the relevant industry on Sunday.
Such immediateness of semiconductor lines that was an unprecedented semiconductor fab linked technology with production resources, built in Kihueng Plnat in the early investment of 200mm line, and became the major factor of Samsung mythology of `Korean style semiconductor fab`.
The advanced semiconductor industry such as US and Japan generally separate R&D line with production line
NRD line of Samsung is a semiconductor research complex facility of 35,000 ft2 for 300 mm micro-fine processing that is comprised of the two-story fab and the nine-story offices with investment of 860 billion won in Whasung industrial complex.
This line is to start with full scale from May next year and be used for research of the next generation products such as 4Gb & 8Gb large capacity D-ram and 32Gb & 64Gb Nand flash and cutting-edge nano technology of 50 nano, 40 nano and 30 nano. The company plans to make it as the world-renowned R&D center with the up-to-date R&D facility and 5,000 qualified research staff.
Hynix is to build 300mm R&D line combined R&D line with mass production line of Nand flash in M6 line that is to be moved to the joint-plant in China with investment of 90 to 100 billion won. Particularly, the fact is raising interest from the industry that the new fab of Hynix is able to not only link R&D with mass production but also switch R&D line to volume production line depending on the market situation.