South Korean research team has developed world’s first technology that can control graphene electronic device through static electricity.
Research team led by Professor Kim Sang-woo of Sungkyunkwan University announced on the 2nd that it has developed graphene electronic device that controls electric properties by utilizing static electricity that occurs from 2D matters that have thin atomic layers.
Although 2D matters including graphene are seen as next-generation materials due to their excellent electric properties, it is difficult to integrate them and they have complicated manufacturing process. Commercialization has been slow as one cannot modify location, form, and size of a gate that controls current.
Research team has developed a gate that utilizes graphene electrostatic phenomenon. Static electricity that occurs from friction is trapped inside of a lower board and plays a role of a gate. Unlike current materials, formation, modification, and elimination are possible with this technology. This technology can also be applied to variety of other 2D matters.
Process that forms a gate, which will control current from an electronic device, will not be needed anymore. As a result, integration with high density is now possible and it is expected that this technology will reduce cost and time to manufacture electronic devices.
“We have overcome limitations of 2D materials by utilizing static electricity.” said Professor Kim Sang-woo. “This technology can be applied to memory devices with ultra-high capacities, graphene transparent electrodes, and electrodes within semiconductor devices.”
This research was published on an international scientific journal called ‘Nature Communications’ and was carried out with support from Ministry of Science, ICP and Future Planning and National Research Foundation of Korea’s Basic Research Support Project (individual research).
Staff Reporter Song, Junyoung | songjy@etnews.com