Research team led by Professor Kim Hyun-jae of Yonsei University’s Electrical and Electronic Engineering Department made an announcement on the 14th that it has succeeded in developing thin-film oxide transistor in low temperature by using ultraviolet ray-heat treatment and high-pressure heat treatment at the same time. Two papers of thesis based on result of this research was published on Scientific Report, which is a sister journal to Nature.
Indium-Gallium-Zinc Oxide (InGaZnO) Thin-Film Transistor that was manufactured by vacuum process is currently widely-used for many products such as monitors, OLED TVs, i-Pads and others. However because InGaZnO Thin-Film Transistor can have its semiconductor characteristics in high-temperature heat treatment process that is more than 300°C, it is hard to use it for variety of flexible boards that have low melting points.
Research team was able to manufacture InGaZnO Thin-Film Transistors at 150°C and 100°C by applying ultraviolet ray-heat treatment and high-pressure heat treatment at the same time instead of using high-temperature heat treatment. By doing so, it was able to confirm that energy from ultraviolet ray and kinetic theory of gas act as source of energy to vitalize InGaZnO Thin-Films. It was able to learn than these transistors have better electrical characteristics and reliable than the ones manufactured at 300°C.
“Thin-film oxide transistors can be manufactured directly on top of variety of flexible boards by using low-temperature processing technology that was used in this research and they have high application values in developing next-generation flexible electronic elements.” said Professor Kim Hyun-jae who was the person in charge of this research. “By using result of this research, we will be able to secure competitive edge in price in flexible electronic element markets in the future since these transistors can be applied to variety of flexible boards.”
Staff Reporter Bae, Okjin | withok@etnews.com